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SSM6J23FE
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ)
SSM6J23FE
High Current Switching Applications DC-DC Converter
Unit: mm
• Suitable for high-density mounting due to compact package
• Low on-resistance:
Ron = 160 mΩ (max) (@VGS = -4.0 V) Ron = 210 mΩ (max) (@VGS = -2.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
-12
V
Gate-Source voltage
VGSS
±8
V
Drain current
DC
ID
-1.2
A
Pulse
IDP
-4.8
1,2,5,6 : Drain
3
: Gate
4
: Source
Drain power dissipation Channel temperature Storage temperature range
PD
500
mW
(Note 1)
Tch
150
°C
Tstg
−55 to 150
°C
JEDEC JEITA TOSHIBA
2-2N1A
Note:
Using continuously under heavy loads (e.g.
SSM6J23FE Datasheet
