SSM6J23FE Overview
SSM6J23FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) SSM6J23FE High Current Switching Applications DC-DC Converter Unit: mm Suitable for high-density mounting due to pact package Low on-resistance: Source Drain power dissipation Channel temperature Storage temperature range PD 500 mW (Note 1) Tch 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA 2-2N1A Note:.