SSM6J23FE
SSM6J23FE is Silicon P-Channel MOSFET manufactured by Toshiba.
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ)
High Current Switching Applications DC-DC Converter
Unit: mm
- Suitable for high-density mounting due to pact package
- Low on-resistance:
Ron = 160 mΩ (max) (@VGS = -4.0 V) Ron = 210 mΩ (max) (@VGS = -2.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
-12
Gate-Source voltage
VGSS
±8
Drain current
-1.2
Pulse
-4.8
1,2,5,6 : Drain
: Gate
: Source
Drain power dissipation Channel temperature Storage temperature range
500 m W
(Note 1)
Tch
°C
Tstg...
