SSM6J25FE Description
SSM6J25FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) SSM6J25FE High Speed Switching Applications Optimum for high-density mounting in small packages Low on-resistance: Ron = 260mΩ (max) (@VGS = -4 V) Ron = 430mΩ (max) (@VGS = -2.5 V) Unit: Using continuously under heavy loads (e.g.