SSM6J25FE
SSM6J25FE is Silicon P-Channel MOSFET manufactured by Toshiba.
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
High Speed Switching Applications
- Optimum for high-density mounting in small packages
- Low on-resistance: Ron = 260mΩ (max) (@VGS = -4 V)
Ron = 430mΩ (max) (@VGS = -2.5 V)
Unit: mm
1.6±0.05 1.2±0.05
0.2±0.05
1.6±0.05 1.0±0.05 0.5 0.5
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-Source voltage
Symbol VDS
Rating
Unit
-20
0.12±0.05
0.55±0.05
Gate-Source voltage
VGSS
± 12
Drain current
-0.5
Pulse
-1.5
Drain power dissipation Channel temperature Storage temperature range
500 m W
(Note 1)
Tch
°C
Tstg...
