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SSM6J26FE
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
SSM6J26FE
High Speed Switching Applications
Unit: mm
0.2±0.05
• Optimum for high-density mounting in small packages • Low on-resistance: Ron = 230mΩ (max) (@VGS = -4 V)
Ron = 330mΩ (max) (@VGS = -2.5 V) Ron = 980mΩ (max) (@VGS = -1.8 V)
Absolute Maximum Ratings (Ta = 25°C)
1.6±0.05 1.2±0.05
1
6
2
5
1.6±0.05 1.0±0.05 0.5 0.5
0.12±0.05
Characteristics
Drain-Source voltage Gate-Source voltage
Drain current
DC Pulse
Drain power dissipation
Channel temperature Storage temperature range
Symbol
Rating
Unit
VDS
-20
V
VGSS
±8
V
ID
-0.5
A
IDP
-1.5
PD
500
mW
(Note 1)
Tch
150
°C
Tstg
−55 to 150
°C
3
4
0.55±0.
SSM6J26FE Datasheet
