TPC8108
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
- -
- -
- Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 9.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 24 S (typ.) Low leakage current: IDSS =
- 10 µA (max) (VDS =
- 30 V) Enhancement-mode: Vth =
- 0.8 to
- 2.0 V (VDS =
- 10 V, ID =
- 1 m A) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating
- 30
- 30 ±20
- 11
- 44 1.9 Unit V V V A
JEDEC JEITA TOSHIBA
― ― 2-6J1B
Drain power...
