Datasheet Summary
MOSFETs Silicon N-channel MOS (U-MOS)
1. Applications
- Motor Drivers
- Mobile Equipment
2. Features
(1) AEC-Q101 qualified (2) Small footprint due to a small and thin package (3) Small gate charge : QSW = 4.7 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 29.1 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) Enhancement mode: Vth = 2 to 3 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
PS-8
1: Source(1) 2: Gate(1) 7, 8: Drain(1)
3: Source(2) 4: Gate(2) 5, 6: Drain(2)
©2016 Toshiba Corporation
Start of mercial production
2012-12
2016-02-23 Rev.5.0
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