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TPCP8207 - Silicon N-Channel MOSFET

Features

  • (1) AEC-Q101 qualified (2) Small footprint due to a small and thin package (3) Small gate charge : QSW = 4.7 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 29.1 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) Enhancement mode: Vth = 2 to 3 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TPCP8207 PS-8 1: Source(1) 2: Gate(1) 7, 8: Drain(1) 3: Source(2) 4: Gate(2) 5, 6: Drain(2) ©2016 Toshiba Corporation 1 Start of commercial productio.

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Full PDF Text Transcription

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MOSFETs Silicon N-channel MOS (U-MOS) TPCP8207 1. Applications • Motor Drivers • Mobile Equipment 2. Features (1) AEC-Q101 qualified (2) Small footprint due to a small and thin package (3) Small gate charge : QSW = 4.7 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 29.1 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) Enhancement mode: Vth = 2 to 3 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TPCP8207 PS-8 1: Source(1) 2: Gate(1) 7, 8: Drain(1) 3: Source(2) 4: Gate(2) 5, 6: Drain(2) ©2016 Toshiba Corporation 1 Start of commercial production 2012-12 2016-02-23 Rev.5.0 TPCP8207 4.
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