1SS418 - Silicon Diode

Toshiba

Datasheet Details

Part number	1SS418
Manufacturer	Toshiba
File Size	138.70 KB
Description	Silicon Diode
Datasheet	1SS418 Datasheet
Additional preview pages of the 1SS418 datasheet.

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS418 High Speed Switching Application • Low forward voltage : VF (3) = 0.23V (typ.)@ IF = 5mA 1SS418 Unit: mm CATHODE MARK Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage VRM VR 35 V 30 V sESC Maximum (peak) forward current IFM 200 mA Average forward current Surge current (10ms) Power dissipation IO IFSM P* 100 mA 1A 100 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 ~ 125 °C Operating temperature range Topr −40 ~ 100 °C JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.

Published: May 28, 2016 |