1SS418 Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS418 High Speed Switching Application Low forward voltage : VF (3) = 0.23V (typ.)@ IF = 5mA 1SS418 Unit: Using continuously under heavy loads (e.g.
- Part: 1SS418
- Manufacturer: Toshiba
- Size: 138.70 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
| 1SS412 | Silicon Diode |
| 1SS413 | Schottky Barrier Diode |
| 1SS413CT | Schottky Barrier Diode |
| 1SS416 | Schottky Barrier Diode |
| 1SS416CT | Silicon Epitaxial Schottky Barrier Type Diode |