1SS418
1SS418 is Silicon Diode manufactured by Toshiba.
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
High Speed Switching Application
- Low forward voltage
: VF (3) = 0.23V (typ.)@ IF = 5m A
Unit: mm
CATHODE MARK
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage Reverse voltage
VRM VR
35 V
30 V s ESC
Maximum (peak) forward current IFM 200 m A
Average forward current Surge current (10ms) Power dissipation
IO IFSM P-
100 m A 1A
100 m W
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
- 55 ~ 125
°C
Operating temperature range
Topr
- 40 ~ 100 °C JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
JEITA
―
TOSHIBA
1-1K1A
Weight: 0.0011g(Typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
- Mounted on a glass epoxy circuit board of 20 × 20mm, pad dimension of 4 × 4mm.
Electrical Characteristics (Ta =...
