1SS419 Datasheet | Toshiba

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type High-Speed Switching Applications Unit: mm CATHODE MARK - Small package - Low forward voltage: VF (3) = 0.56 V (typ.) - Low reverse current: IR = 5 μA (max) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage 45 V s ESC Reverse voltage VR 40 V Maximum (peak) forward current IFM 200 m A Average forward current Surge current (10 ms) Power dissipation IO IFSM P- 100 m A 1A 100 m W Junction temperature Tj 125 °C Storage temperature range Tstg - 55~125 °C JEDEC ― Operating temperature range Topr - 40~100 °C JEITA ― Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 1-1K1A Weight: 0.0011 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate,...