1SS419 Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS419 High-Speed Switching Applications 1SS419 Unit: mm CATHODE MARK Small package Low forward voltage: VF (3) = 0.56 V (typ.) Low reverse current:.
- Part: 1SS419
- Manufacturer: Toshiba
- Size: 117.21 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
| 1SS412 | Silicon Diode |
| 1SS413 | Schottky Barrier Diode |
| 1SS413CT | Schottky Barrier Diode |
| 1SS416 | Schottky Barrier Diode |
| 1SS416CT | Silicon Epitaxial Schottky Barrier Type Diode |