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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS419
High-Speed Switching Applications
1SS419
Unit: mm
CATHODE MARK
• Small package • Low forward voltage: VF (3) = 0.56 V (typ.) • Low reverse current: IR = 5 μA (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
45 V sESC
Reverse voltage
VR 40 V
Maximum (peak) forward current IFM 200 mA
Average forward current Surge current (10 ms) Power dissipation
IO IFSM P*
100 mA 1A
100 mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
−55~125
°C JEDEC
―
Operating temperature range
Topr
−40~100
°C JEITA
―
Note: Using continuously under heavy loads (e.g.
1SS419 Datasheet
