1SS424 - Silicon Diode

Toshiba

Datasheet Details

Part number	1SS424
Manufacturer	Toshiba
File Size	136.84 KB
Description	Silicon Diode
Datasheet	1SS424 Datasheet
Additional preview pages of the 1SS424 datasheet.

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS424 High-Speed Switching Applications z Low forward voltage : VF (3) = 0.50 V (typ.) 1SS424 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 30 V Reverse voltage VR 20 V Maximum (peak) forward current IFM 300 mA Average forward current Surge current (10 ms) Power dissipation IO IFSM P* 200 mA 1A 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −40 to 100 °C JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.

Published: May 28, 2016 |