1SS426 Overview
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS426 Ultra-High Speed Switching Applications z pact 2-pin package: Ideal for high-density mounting z Low forward voltage : VF (3) = 0.98 V (typ.) z Fast reverse recovery time.
1SS426 datasheet by Toshiba.
| Part number | 1SS426 |
|---|---|
| Datasheet | 1SS426-Toshiba.pdf |
| File Size | 220.23 KB |
| Manufacturer | Toshiba |
| Description | Silicon Diode |
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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS426 Ultra-High Speed Switching Applications z pact 2-pin package: Ideal for high-density mounting z Low forward voltage : VF (3) = 0.98 V (typ.) z Fast reverse recovery time.
| Part Number | Description |
|---|---|
| 1SS420 | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS420CT | Silicon Diode |
| 1SS421 | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS422 | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS423 | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS424 | Silicon Diode |
| 1SS427 | Silicon Diode |
| 1SS403E | Silicon Epitaxial Planar Switching Diodes |
| 1SS405 | Schottky Barrier Diode |
| 1SS406 | Schottky Barrier Diode |