1SS426 Description
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS426 Ultra-High Speed Switching Applications z pact 2-pin package: Ideal for high-density mounting z Low forward voltage : VF (3) = 0.98 V (typ.) z Fast reverse recovery time.
1SS426 is Silicon Diode manufactured by Toshiba .
| Part Number | Description |
|---|---|
| 1SS420 | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS420CT | Silicon Diode |
| 1SS421 | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS422 | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS423 | Silicon Epitaxial Schottky Barrier Type Diode |
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS426 Ultra-High Speed Switching Applications z pact 2-pin package: Ideal for high-density mounting z Low forward voltage : VF (3) = 0.98 V (typ.) z Fast reverse recovery time.