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E557
2SB998
2SB999I
SILICON PNP TRIPLE DIFFUSED TYPE (DARLINGTON POWER)
HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS.
FEATURES . High DC Current Gain,: hFE=2000(Min. ) (at Vce=-3V, Ic=-3A; . Low Saturation Voltage : VcE(sat)=-l .5V(Max. ) (at Ic=-3A^ . Complementary to 2SD1357, 2SD1358 and 2SD1359
INDUSTRIAL APPLICATIONS Unit in mm
10.3 MAX 03.2±O.2
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
2SB997 2SB998 2SB999
Collector-Emitter Voltage
2SB997 2SB998 2SB999
SYMBOL VCBO VCEO
RATING -100 -80 -60
-100 -80 -60
UNIT
+ Q25 176-Q15
2.54±0.2£
Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
EQUIVALENT CIRCUIT
VEBO IC IB PC
-stg
-5 -7 -0.
2SB998 Datasheet
