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2SB997 - Silicon PNP Transistor

Download the 2SB997 datasheet PDF. This datasheet also covers the 2SB998 variant, as both devices belong to the same silicon pnp transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • . High DC Current Gain,: hFE=2000(Min. ) (at Vce=-3V, Ic=-3A; . Low Saturation Voltage : VcE(sat)=-l .5V(Max. ) (at Ic=-3A^ . Complementary to 2SD1357, 2SD1358 and 2SD1359.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SB998_Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SB997
Manufacturer Toshiba
File Size 115.96 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2SB997 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
: E557 2SB998 2SB999I SILICON PNP TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. FEATURES . High DC Current Gain,: hFE=2000(Min. ) (at Vce=-3V, Ic=-3A; . Low Saturation Voltage : VcE(sat)=-l .5V(Max. ) (at Ic=-3A^ . Complementary to 2SD1357, 2SD1358 and 2SD1359 INDUSTRIAL APPLICATIONS Unit in mm 10.3 MAX 03.2±O.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage 2SB997 2SB998 2SB999 Collector-Emitter Voltage 2SB997 2SB998 2SB999 SYMBOL VCBO VCEO RATING -100 -80 -60 -100 -80 -60 UNIT + Q25 176-Q15 2.54±0.2£ Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT VEBO IC IB PC -stg -5 -7 -0.