Toshiba GT60PR21
Silicon N-Channel IGBT
| Part No. | GT60PR21 |
|---|---|
| Datasheet | GT60PR21 Download |
| Manufacturer |  Toshiba |
| Description | Silicon N-Channel IGBT |
| Buy | Stock & Price |
APPLICATIONS
● Dedicated to Voltage-Resonant Inverter SwitchingAPPLICATIONS
Note: The product(s) described herein should not be used for any other application. 2.FEATURES
(1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: IGBT tf = 0.16 µs (typ.) (IC = 60 A) FWD trr = 0.60 µs (typ.) (IF = 15 A) (5) Low saturation voltage: VCE(sat) = 2.0 V (typ.) (IC = 60 A) (6) High junction temperature: Tj = 175 (max) 3. Packaging and Internal Circuit TO-3P(N) 1: Gate 2: Collector 3: Emitter Start of commercial production 2012-03 1 2014-01-07 Rev.2.0 GT60PR21 4.ABSOLUTE MAXIMUM RATINGS
(Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Collector-emitter voltage Gate-emitter voltage Collector current (DC) Collector current (DC) Collector current (1 ms) Diode forward current (DC) Diode forward current (100 µs) Collector power dissipation Junction temperature Sto...
