HN1D04FU - Silicon Epitaxial Planar Type Diode

Toshiba

Datasheet Details

Part number	HN1D04FU
Manufacturer	Toshiba
File Size	231.42 KB
Description	Silicon Epitaxial Planar Type Diode
Datasheet	HN1D04FU Datasheet

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TOSHIBA Diode Silicon Epitaxial Planar Type HN1D04FU Ultra High Speed Switching Application z Low forward voltage : VF(3) = 0.90V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.9pF (typ.) HN1D04FU Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature VRM VR IFM IO IFSM P Tj Tstg 85 V 80 V 300* mA 100* mA 2* A 200** mW 150 °C −55 to 150 °C US6 1.ANODE1 2.CATHODE2 3.ANODE4 CATHODE3 4.ANODE3 5.CATHODE4 6.CATHODE1 ANODE2 Note: Using continuously under heavy loads (e.g.