HN1D05FE - Silicon Epitaxial Planar Type Diode

Product Overview

Toshiba

Part number	HN1D05FE
Manufacturer	Toshiba
File Size	213.32 KB
Description	Silicon Epitaxial Planar Type Diode
Datasheet	HN1D05FE Datasheet
Additional preview pages of the HN1D05FE datasheet.

(1) Small package (2) Low reverse current: IR(2) = 0.1 µA (max) (3) Low forward voltage: VF(2) = 1.0 V (typ. ) (4) Fast reverse recovery time: trr = 0.5 µs (typ. ) (5) Small total capacitance: Ct = 4.3 pF (typ. ) 3. Packaging and Internal Circuit ES6 HN1D05FE 1: Anode1 2: N. C. 3: Cathode2 4: Anode2 5: N. C. 6: Cathode1 ©2022-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2023-10 2023-10-27 Rev.1.0 HN1D05FE 4. Absolute Maximum Ratings (Note) (Unless othe.

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Published: May 20, 2024 |