SSM6J771G - Silicon P-Channel MOSFET

Toshiba

Datasheet Details

MOSFETs Silicon P-Channel MOS SSM6J771G 1.

Applications • BATFETs • Power Management Switches 2.

(1) High VGSS voltage : ±12V (2) High VDSS voltage : -20V (3) Low drain-source on-resistance : RDS(ON) = 26 mΩ (typ. ) (@VGS = -4.5 V,ID = -3.0A) RDS(ON) = 24 mΩ (typ. ) (@VGS = -8.0 V,ID = -3.0A) RDS(ON) = 23 mΩ (typ. ) (@VGS = -8.5 V,ID = -3.0A) 3. Packaging and Pin Assignment SSM6J771G WCSP6C A1. Gate A2. Source B1. Source B2. Source C1. Drain C2. Drain 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDS.