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SSM6J771G - Silicon P-Channel MOSFET

Features

  • (1) High VGSS voltage : ±12V (2) High VDSS voltage : -20V (3) Low drain-source on-resistance : RDS(ON) = 26 mΩ (typ. ) (@VGS = -4.5 V,ID = -3.0A) RDS(ON) = 24 mΩ (typ. ) (@VGS = -8.0 V,ID = -3.0A) RDS(ON) = 23 mΩ (typ. ) (@VGS = -8.5 V,ID = -3.0A) 3. Packaging and Pin Assignment SSM6J771G WCSP6C A1. Gate A2. Source B1. Source B2. Source C1. Drain C2. Drain 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDS.

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Datasheet Details

Part number SSM6J771G
Manufacturer Toshiba
File Size 222.32 KB
Description Silicon P-Channel MOSFET
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MOSFETs Silicon P-Channel MOS SSM6J771G 1. Applications • BATFETs • Power Management Switches 2. Features (1) High VGSS voltage : ±12V (2) High VDSS voltage : -20V (3) Low drain-source on-resistance : RDS(ON) = 26 mΩ (typ.) (@VGS = -4.5 V,ID = -3.0A) RDS(ON) = 24 mΩ (typ.) (@VGS = -8.0 V,ID = -3.0A) RDS(ON) = 23 mΩ (typ.) (@VGS = -8.5 V,ID = -3.0A) 3. Packaging and Pin Assignment SSM6J771G WCSP6C A1. Gate A2. Source B1. Source B2. Source C1. Drain C2. Drain 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS ±12 Drain current (DC) (Note 1) ID -5.0 A Drain current (pulsed) (Note 1), (Note 2) IDP -10.0 Power dissipation (Note 3) PD 1.
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