SSM6N7002CFU
Features
(1) Gate-Source diode for protection (2) Low drain-source on-resistance
: RDS(ON) = 2.8 Ω (typ.) (@VGS = 10 V, ID = 100 m A) RDS(ON) = 3.1 Ω (typ.) (@VGS = 5 V, ID = 100 m A) RDS(ON) = 3.2 Ω (typ.) (@VGS = 4.5 V, ID = 100 m A)
3. Packaging and Pin Assignment
US6
1. Source1 2. Gate1 3. Drain2 4. Source2 5. Gate2 6. Drain1
Start of mercial production
2015-04
2015-04-13
Rev.1.0
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) (Q1,Q2 mon)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
170 m A
Drain current (pulsed)
(Note 1), (Note 2)
Power dissipation
(Note 3)
285 m W
Channel temperature
Tch
Storage temperature
Tstg
-55 to...
