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SSM6N7002CFU - Silicon N-Channel MOSFET

Key Features

  • (1) Gate-Source diode for protection (2) Low drain-source on-resistance : RDS(ON) = 2.8 Ω (typ. ) (@VGS = 10 V, ID = 100 mA) RDS(ON) = 3.1 Ω (typ. ) (@VGS = 5 V, ID = 100 mA) RDS(ON) = 3.2 Ω (typ. ) (@VGS = 4.5 V, ID = 100 mA) 3. Packaging and Pin Assignment US6 SSM6N7002CFU 1. Source1 2. Gate1 3. Drain2 4. Source2 5. Gate2 6. Drain1 Start of commercial production 2015-04 1 2015-04-13 Rev.1.0 SSM6N7002CFU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) (Q1,Q2 Common.

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MOSFETs Silicon N-Channel MOS SSM6N7002CFU 1. Applications • High-Speed Switching 2. Features (1) Gate-Source diode for protection (2) Low drain-source on-resistance : RDS(ON) = 2.8 Ω (typ.) (@VGS = 10 V, ID = 100 mA) RDS(ON) = 3.1 Ω (typ.) (@VGS = 5 V, ID = 100 mA) RDS(ON) = 3.2 Ω (typ.) (@VGS = 4.5 V, ID = 100 mA) 3. Packaging and Pin Assignment US6 SSM6N7002CFU 1. Source1 2. Gate1 3. Drain2 4. Source2 5. Gate2 6. Drain1 Start of commercial production 2015-04 1 2015-04-13 Rev.1.0 SSM6N7002CFU 4.