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SSM6N7002KFU - Silicon N-Channel MOSFET

Features

  • (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Low drain-source on-resistance : RDS(ON) = 1.05 Ω (typ. ) (@VGS = 10 V) RDS(ON) = 1.15 Ω (typ. ) (@VGS = 5.0 V) RDS(ON) = 1.2 Ω (typ. ) (@VGS = 4.5 V) 3. Packaging and Internal Circuit SSM6N7002KFU 1: Source1 2: Gate1 3: Drain2 4: Source2 5: Gate2 6: Drain1 US6 4. Orderable part number Orderable part number AEC-Q101 Note SSM6N7002KFU,LF SSM6N7002KFU,LXG SSM6N7002KFU,LXH.
  • YES YES (Note 1) General Use Unintended Us.

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Datasheet Details

Part number SSM6N7002KFU
Manufacturer Toshiba
File Size 292.85 KB
Description Silicon N-Channel MOSFET
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MOSFETs Silicon N-Channel MOS (U-MOS�-H) SSM6N7002KFU 1. Applications • High-Speed Switching 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Low drain-source on-resistance : RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V) RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V) 3. Packaging and Internal Circuit SSM6N7002KFU 1: Source1 2: Gate1 3: Drain2 4: Source2 5: Gate2 6: Drain1 US6 4. Orderable part number Orderable part number AEC-Q101 Note SSM6N7002KFU,LF SSM6N7002KFU,LXG SSM6N7002KFU,LXH � YES YES (Note 1) General Use Unintended Use Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website.
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