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TC58NVG3D2ETA00 Datasheet 8 GBIT (1G X 8 BIT) CMOS NAND E2PROM

Manufacturer: Toshiba

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General Description

The TC58NVG3D2 is a single 3.3 V 8 Gbit (8,984,199,168 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192 + 376) bytes × 128 pages × 1028 blocks.

The device has two 8568-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 8568-byte increments.

The Erase operation is implemented in a single block unit (1 Mbytes + 47 Kbytes: 8568 bytes × 128 pages).

Overview

TOSHIBA CONFIDENTIAL TENTATIVE TC58NVG3D2ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT (1G × 8 BIT) CMOS NAND E PROM.

Key Features

  • Organization Memory cell array Register Page size Block size.
  • TC58NVG3D2E 8568 × 128.5K × 8 8568 × 8 8568 bytes (1M + 47 K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Mode control Serial input/output Command control Number of valid blocks Min 984 blocks Max 1028 blocks Power supply VCC = 2.7 V to 3.6 V VCCQ = 2.7 V to 3.6 V Access time Cell array to register Serial Read Cycle Program/Erase time Auto Page Program Auto Block.

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