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TC58NVG3D2ETA00 Datasheet

Manufacturer: Toshiba
TC58NVG3D2ETA00 datasheet preview

TC58NVG3D2ETA00 Details

Part number TC58NVG3D2ETA00
Datasheet TC58NVG3D2ETA00_Toshiba.pdf
File Size 482.59 KB
Manufacturer Toshiba
Description 8 GBIT (1G X 8 BIT) CMOS NAND E2PROM
TC58NVG3D2ETA00 page 2 TC58NVG3D2ETA00 page 3

TC58NVG3D2ETA00 Overview

The device has two 8568-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 8568-byte increments. The Erase operation is implemented in a single block unit (1 Mbytes + 47 Kbytes: The TC58NVG3D2 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand inputs.

TC58NVG3D2ETA00 Key Features

  • Organization Memory cell array Register Page size Block size
  • Package TSOP I 48-P-1220-0.50C

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