TC58NVG6D2GTA00 Datasheet | Toshiba

TOSHIBA CONFIDENTIAL TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64 GBIT (8G  8 BIT) CMOS NAND E PROM (Multi-Level-Cell) DESCRIPTION The TC58NVG6D2 is a single 3.3 V 64 Gbit (74,594,648,064 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192 + 640) bytes  256 pages  4124 blocks. The device has two 8832-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 8832-byte increments. The Erase operation is implemented in a single block unit (2 Mbytes  160 Kbytes: 8832 bytes  256 pages). The TC58NVG6D2 is a serial-type memory device...