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TC58NVG6DDJTA00 Datasheet 64 Gbit (8g X 8 Bit) CMOS Nand E2prom

Manufacturer: Toshiba

Overview: TOSHIBA CONFIDENTIAL TENTATIVE TC58NVG6DDJTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 64 GBIT (8G × 8 BIT) CMOS NAND E PROM.

General Description

The TC58NVG6DD is a single 3.3 V 64 Gbit (77,054,607,360 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (16384 + 1280) bytes × 256 pages × 2130 blocks.

The device has two 17664-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 17664-byte increments.

The Erase operation is implemented in a single block unit (4 Mbytes + 320 Kbytes: 17664 bytes × 256 pages).

Key Features

  • Organization Device capacity Register Page size Block size.
  • TC58NVG6DDJTA00 17664 × 256 × 2130 × 8 bits 17664 × 8 bits 17664 bytes (4M + 320 K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read Mode control Serial input/output Command control Number of valid blocks Min 2018 blocks Max 2130 blocks Power supply VCC = 2.7 V to 3.6 V Access time Cell array to register Seria.

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