TC58NVG6DDJTA00 Datasheet | Toshiba

TOSHIBA CONFIDENTIAL TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64 GBIT (8G × 8 BIT) CMOS NAND E PROM (Multi-Level-Cell) DESCRIPTION The TC58NVG6DD is a single 3.3 V 64 Gbit (77,054,607,360 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (16384 + 1280) bytes × 256 pages × 2130 blocks. The device has two 17664-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 17664-byte increments. The Erase operation is implemented in a single block unit (4 Mbytes + 320 Kbytes: 17664 bytes × 256 pages). The TC58NVG6DD is a serial-type memory...