TC58NVG6T2FTA00 Datasheet | Toshiba

TOSHIBA CONFIDENTIAL TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64 GBIT (8G  8 BIT) CMOS NAND E PROM (Triple-Level-Cell) DESCRIPTION The TC58NVG6T2FTA00 is a single 3.3 V 64 Gbit (79,054,700,544 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192  1024) bytes  258 pages 4156 blocks. The device has four 9216-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 9216-byte increments. The Erase operation is implemented in a single block unit (2064 Kbytes  258 Kbytes:9216 bytes x 258 pages). The TC58NVG6T2FTA00 is a serial-type...