TGI8596-50
TGI8596-50 is MICROWAVE POWER GaN HEMT manufactured by Toshiba.
MICROWAVE POWER GaN HEMT
Features
ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER
Pout= 47.0dBm at Pin= 41dBm ŋHIGH GAIN
GL= 9.0dB at Pin= 20dBm ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
CONDITIONS
UNIT MIN. TYP. MAX.
Output Power Drain Current Power Added Efficiency
Pout IDS add
VDS= 24V IDSset= 1.5A f= 8.5 to 9.6 GHz @Pin= 41dBm dBm 46.0 47.0
%
Linear Gain Channel Temperature Rise
GL Tch
@Pin= 20dBm dB
(VDS IDS Pin
- Pout)
Rth(c-c)
°C
130 150
Remended Gate Resistance(Rg): 13.3
ELECTRICAL CHARACTERISTICS ( Ta= 25°C...
