TGI9098-100P
TGI9098-100P is MICROWAVE POWER GaN HEMT manufactured by Toshiba.
Features
ŋINTERNALLY MATCHED HEMT ŋHIGH POWER
Pout= 50.0dBm at Pin= 42dBm ŋHIGH GAIN
GL= 12.0dB at 9.0GHz to 9.8GHz ŋHERMETICALLY SEALED PACKAGE ŋPULSE OPERATION
Pulse width= 100μs, Duty cycle= 10%
MICROWAVE POWER GaN HEMT
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power (pulsed) Drain Current (pulsed) Power Added Efficiency
SYMBOL Pout IDS1 add
CONDITIONS
VDS= 24V IDSset= 6A f= 9.0 to 9.8 GHz @Pin= 42dBm Pulse width=100μs Duty cycle=10%
Linear Gain
@Pin= 35dBm
Remended Gate Resistance (Rg): 10
UNIT MIN. TYP. MAX. dBm A % dB
49.0
50.0 10.0 40 12.0
13.0
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS...
