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FEATURES
ŋINTERNALLY MATCHED HEMT ŋHIGH POWER
Pout= 50.0dBm at Pin= 42dBm ŋHIGH GAIN
GL= 12.0dB at 9.0GHz to 9.8GHz ŋHERMETICALLY SEALED PACKAGE ŋPULSE OPERATION
Pulse width= 100μs, Duty cycle= 10%
MICROWAVE POWER GaN HEMT
TGI9098-100P
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power (pulsed) Drain Current (pulsed) Power Added Efficiency
SYMBOL Pout IDS1 add
CONDITIONS
VDS= 24V IDSset= 6A f= 9.0 to 9.8 GHz @Pin= 42dBm Pulse width=100μs Duty cycle=10%
Linear Gain
GL
@Pin= 35dBm
Recommended Gate Resistance (Rg): 10
UNIT MIN. TYP. MAX.
dBm A % dB
49.0
50.0 10.0 40 12.0
13.0
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage
SYMBOL gm
VGSoff
CONDITIONS
VDS= 5V IDS= 10.
TGI9098-100P Datasheet
