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TRS24N65FB - SiC Schottky Barrier Diode

Features

  • (1) Chip design of 2nd generation (2) High non-repetitive peak forward surge current: IFSM (Per Leg) / (Both Legs) = 92 A / 184 A (3) Low junction capacitance: Cj (Per Leg) = 46 pF (typ. ) (4) Low reverse current: IR (Per Leg) = 0.6 µA (typ. ) 3. Packaging and Internal Circuit TO-247 1: Anode 2: Cathode (heatsink) 3: Anode ©2019-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2020-07 2020-07-03 Rev.1.0 TRS24N65FB 4. Absolute Maximum Ratings (Note) (Unle.

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Datasheet Details

Part number TRS24N65FB
Manufacturer Toshiba
File Size 263.57 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet TRS24N65FB Datasheet

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Full PDF Text Transcription

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SiC Schottky Barrier Diode TRS24N65FB TRS24N65FB 1. Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters 2. Features (1) Chip design of 2nd generation (2) High non-repetitive peak forward surge current: IFSM (Per Leg) / (Both Legs) = 92 A / 184 A (3) Low junction capacitance: Cj (Per Leg) = 46 pF (typ.) (4) Low reverse current: IR (Per Leg) = 0.6 µA (typ.) 3. Packaging and Internal Circuit TO-247 1: Anode 2: Cathode (heatsink) 3: Anode ©2019-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2020-07 2020-07-03 Rev.1.0 TRS24N65FB 4.
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