TRS24N65FB
TRS24N65FB is SiC Schottky Barrier Diode manufactured by Toshiba.
Features
(1) Chip design of 2nd generation (2) High non-repetitive peak forward surge current: IFSM (Per Leg) / (Both Legs) = 92 A / 184 A (3) Low junction capacitance: Cj (Per Leg) = 46 p F (typ.) (4) Low reverse current: IR (Per Leg) = 0.6 µA (typ.)
3. Packaging and Internal Circuit
TO-247
1: Anode 2: Cathode (heatsink) 3: Anode
©2019-2020 Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2020-07
2020-07-03 Rev.1.0
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Test Condition
Rating
Unit
Repetitive peak reverse voltage Forward DC current
VRRM IF(DC)
Per Leg
Both Legs
Forward pulse current
(Note 1)
Per Leg
Both Legs
Power dissipation
(Note 2)
Per Leg
Both Legs
Non-repetitive peak forward surge current
IFSM
(Note...
