TRS24N65FB Datasheet SiC Schottky Barrier Diode

Manufacturer: Toshiba

Overview: SiC Schottky Barrier Diode TRS24N65FB TRS24N65FB 1. Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters 2.

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TRS24N65FB sic schottky barrier diode by Toshiba - Datasheet Preview

Datasheet Details

Part number	TRS24N65FB
Manufacturer	Toshiba
File Size	263.57 KB
Description	SiC Schottky Barrier Diode
Download	TRS24N65FB Download (PDF)

Key Features

(1) Chip design of 2nd generation (2) High non-repetitive peak forward surge current: IFSM (Per Leg) / (Both Legs) = 92 A / 184 A (3) Low junction capacitance: Cj (Per Leg) = 46 pF (typ. ) (4) Low reverse current: IR (Per Leg) = 0.6 µA (typ. ) 3. Packaging and Internal Circuit TO-247 1: Anode 2: Cathode (heatsink) 3: Anode ©2019-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2020-07 2020-07-03 Rev.1.0 TRS24N65FB 4. Absolute Maximum Ratings (Note) (Unle.

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