TRS2E65H Datasheet SiC Schottky Barrier Diode

Manufacturer: Toshiba

Overview: SiC Schottky Barrier Diode TRS2E65H 1. Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters 2.

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TRS2E65H sic schottky barrier diode by Toshiba - Datasheet Preview

Datasheet Details

Part number	TRS2E65H
Manufacturer	Toshiba
File Size	437.32 KB
Description	SiC Schottky Barrier Diode
Download	TRS2E65H Download (PDF)

Key Features

(1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ. ) (3) Low total capacitive charge: Qc = 6.5 nC (typ. ) (4) Low reverse current: IR = 0.2 µA (typ. ) 3. Packaging and Internal Circuit TO-220-2L TRS2E65H 1: Cathode 2: Anode ©2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2023-05 2023-04-11 Rev.1.0 TRS2E65H 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
) Characteristics Symbol Note Rating Unit.

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