TRS2E65F Datasheet SiC Schottky Barrier Diode

Manufacturer: Toshiba

Overview: SiC Schottky Barrier Diode TRS2E65F 1. Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters 2.

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TRS2E65F sic schottky barrier diode by Toshiba - Datasheet Preview

Datasheet Details

Part number	TRS2E65F
Manufacturer	Toshiba
File Size	249.91 KB
Description	SiC Schottky Barrier Diode
Download	TRS2E65F Download (PDF)

Key Features

(1) Chip design of 2nd generation. (2) High surge current capability : IFSM = 21A (Max) (3) The junction capacitance is small : Cj = 8.7pF (Typ. ) (4) The reverse current is small. : IR = 0.2 µA (Typ. ) 3. Packaging and Internal Circuit TRS2E65F TO-220-2L 1: Cathode 2: Anode ©2016-2017 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2017-06 2017-09-22 Rev.1.0 TRS2E65F 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristi.

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