TRS2E65F Datasheet | Toshiba

Features (1) Chip design of 2nd generation. (2) High surge current capability : IFSM = 21A (Max) (3) The junction capacitance is small : Cj = 8.7p F (Typ.) (4) The reverse current is small. : IR = 0.2 µA (Typ.) 3. Packaging and Internal Circuit TO-220-2L 1: Cathode 2: Anode ©2016-2017 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2017-06 2017-09-22 Rev.1.0 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Repetitive peak reverse voltage Forward DC current Forward pulse current Non-repetitive peak forward surge current Junction temperature Storage temperature Mounting torque VRRM IF(DC) IFP IFSM Tj Tstg TOR (Note 1) (Note 2) 650 2 20 21 175 -55 to 175 V A A A   Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: t = 50 µs Note 2: f = 50 Hz (half-sine wave t = 10 ms) 5. Thermal Characteristics Characteristics Thermal resistance (junction-to-case) Thermal resistance (junction-to-ambient) Symbol Rth(j-c)  Rth(j-a)  Test Condition 6. Electrical Characteristics (Unless otherwise specified, Ta = 25 ) Max Unit 3.6 /W 89 /W Characteristics Forward voltage Forward voltage Reverse current Junction capacitance Symbol Test Condition VF (1) VF (2) IR Cj IF = 1 A (pulse measurement) IF = 2 A (pulse measurement) VR = 650 V (pulse measurement) VR = 650 V, f = 1...