Download SSM3J317T Datasheet PDF
SSM3J317T page 2
Page 2
SSM3J317T page 3
Page 3

SSM3J317T Description

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J317T ○ Power Management Switch Applications ○ High-Speed Switching Applications 1.8-V drive Low ON-resistance: Ron = 306 mΩ (max) (@VGS = -1.8 V) : Ron = 144 mΩ (max) (@VGS = -2.8 V).