TPC8102 Description
TPC8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π−MOSVI) TPC8102 Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications Small footprint due to small and thin package Low drain−source ON resistance : RDS (ON) = 34 mΩ (typ.) High forward transfer admittance : |Yfs| = 9 S (typ.) Low leakage current.