TPC8103 Description
TPC8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPC8103 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l Small footprint due to small and thin package l Low drain-source ON resistance: RDS (ON) = 9.5 mΩ (typ.) l High forward transfer admittance:.
TPC8103 Key Features
- Small footprint due to small and thin package
- Low drain-source ON resistance: RDS (ON) = 9.5 mΩ (typ.)
- High forward transfer admittance: |Yfs| = 20 S (typ.)
- Low leakage current: IDSS = −10 µA (max) (VDS = −30 V)
- Enhancement-mode: Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA) Maximum Ratings (Ta = 25°C) Characteristics S