TPC8105-H Description
TPC8105-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII) TPC8105−H High Speed and High Efficiency DC−DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications l Small footprint due to small and thin package l High speed switching l Small gate charge : Qg = 32 nC (typ.) l Low drain−source ON resistance : RDS (ON) = 20 mΩ (typ.) l High forward transfer...
TPC8105-H Key Features
- Small footprint due to small and thin package
- High speed switching
- Small gate charge : Qg = 32 nC (typ.)
- Low drain−source ON resistance : RDS (ON) = 20 mΩ (typ.)
- High forward transfer admittance : |Yfs| = 12 S (typ.)
- Low leakage current : IDSS = −10 µA (max) (VDS = −30 V)
- Enhancement−mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA) Maximum Ratings (Ta = 25°C) Characteristics