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PK5A1BA
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-20V
6mΩ @VGS = -4.5V
ID -48A
PDFN 5x6P
100% UIS Tested 100% Rg Tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage Gate-Source Voltage
VDS
-20
VGS
±8
TC = 25 °C
-48
Continuous Drain Current
Pulsed Drain Current1 Avalanche Current
TC = 100 °C TA = 25 °C
ID
TA = 70 °C
IDM
IAS
-30 -18 -14.5 -100 -39
Avalanche Energy
L = 0.1mH
EAS
76
TC = 25 °C
25
Power Dissipation3 Junction & Storage Temperature Range
TC = 100 °C TA = 25 °C TA = 70 °C
PD TJ, TSTG
10 3.5 2.2 -55 to 150
UNITS V
A
mJ W °C
REV1.
PK5A1BA Datasheet
