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USG70N11 Datasheet N-CHANNEL MOSFET

Manufacturer: Unisonic Technologies

General Description

The UTC USG70N11 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology.

The UTC USG70N11 is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits.

 APPLICATION * Synchronous Rectification in SMPS * Hard Switching and High Speed Circuit * DC/DCin Telecoms and Inductrial 

Overview

UNISONIC TECHNOLOGIES CO., LTD USG70N11 Advance 70A, 115V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET.

Key Features

  • RDS(ON) ≤ 12.5 mΩ @ VGS=10V, ID=15A RDS(ON) ≤ 19 mΩ @ VGS=4.5V, ID=8.0A.
  • Optimized for high speed switching, Logic level.
  • Enhanced Body diode dv/dt capability.
  • Enhanced Avalanche Ruggednessy.
  • SYMBOL Drain (5, 6, 7, 8) POWER MOSFET 1 DFN5060-8 Gate (4) Source (1, 2, 3).