Datasheet4U Logo Datasheet4U.com

USGR028N85 - N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The UTC USGR028N85 is a uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • S.
  • RDS(ON) ≤ 2.8 mΩ @ VGS=10V, ID=50A.
  • Excellent gate charge.
  • Very low on-resistance RDS(ON).
  • High switching speed.
  • Low reverse transfer capacitance.
  • SYMBOL POWER MOSFET.

📥 Download Datasheet

Datasheet preview – USGR028N85

Datasheet Details

Part number USGR028N85
Manufacturer UTC
File Size 211.39 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet USGR028N85 Datasheet
Additional preview pages of the USGR028N85 datasheet.

📁 Similar Datasheet

Other Datasheets by UTC

Full PDF Text Transcription

Click to expand full text
UNISONIC TECHNOLOGIES CO., LTD USGR028N85 Preliminary 200A, 85V N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC USGR028N85 is a uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.  FEATURES * RDS(ON) ≤ 2.
Published: |