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USGR028N85 Datasheet N-CHANNEL POWER MOSFET

Manufacturer: Unisonic Technologies

General Description

The UTC USGR028N85 is a uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequency switching and synchronous rectification.

Overview

UNISONIC TECHNOLOGIES CO., LTD USGR028N85 Preliminary 200A, 85V N-CHANNEL ENHANCEMENT MODE POWER MOSFET.

Key Features

  • S.
  • RDS(ON) ≤ 2.8 mΩ @ VGS=10V, ID=50A.
  • Excellent gate charge.
  • Very low on-resistance RDS(ON).
  • High switching speed.
  • Low reverse transfer capacitance.
  • SYMBOL POWER MOSFET.