6N60-C Description
The UTC 6N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.
6N60-C Key Features
- RDS(ON) < 1.5Ω @ VGS=10V, ID=3.1A
- Fast switching capability
- Avalanche energy tested
- Improved dv/dt capability, high ruggedness
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