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6N60-C - N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The UTC 6N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Features

  • S.
  • RDS(ON) < 1.5Ω @ VGS=10V, ID=3.1A.
  • Fast switching capability.
  • Avalanche energy tested.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET.

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Datasheet preview – 6N60-C

Datasheet Details

Part number 6N60-C
Manufacturer Unisonic Technologies
File Size 221.80 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet 6N60-C Datasheet
Additional preview pages of the 6N60-C datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 6N60-C 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.  FEATURES * RDS(ON) < 1.5Ω @ VGS=10V, ID=3.
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