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CHA2190 - 20-30GHz Low Noise Amplifier

General Description

The circuit is a two-stages self biased wide band monolithic low noise amplifier.

The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

It is supplied in chip form.

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Datasheet Details

Part number CHA2190
Manufacturer United Monolithic Semiconductors
File Size 175.49 KB
Description 20-30GHz Low Noise Amplifier
Datasheet download datasheet CHA2190 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA2190 RoHS COMPLIANT 20-30GHz Low Noise Amplifier self biased GaAs Monolithic Microwave IC Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main Feature Broad band performance 20-30GHz 2.2dB noise figure 15dB gain, ± 0.5dB gain flatness Low DC power consumption, 50mA 20dBm 3rd order intercept point Chip size : 1.670 x 1.03x 0.