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CHA2192 - 24-26.5GHz Low Noise Amplifier

Datasheet Summary

Description

The CHA2192 is a two stages low noise amplifier.

It is designed for a wide range of applications, from military to commercial communication systems.

The backside of the chip is both RF and DC grounds.

Features

  • 1.8 dB noise figure.
  • 15 dB ± 1dB gain.
  • 10 dBm output power.
  • Very good broadband input matching.
  • DC power consumption, 40mA @ 3.5V.
  • Chip size : 1.67 x 0.97 x 0.10 mm Gain & NF ( dB ) 20 18 16 Gain 14 12 10 8 6 4 NF 2 0 16 18 20 22 24 26 28 30 32 34 Frequency ( GHz ) Typical on Wafer Measurements Main Characteristics Tamb. = 25°C Symbol Fop G NF P1dB Parameter Operating frequency range Small signal gain Noise figure Output power at 1dB gain compression.

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Datasheet Details

Part number CHA2192
Manufacturer United Monolithic Semiconductors
File Size 91.07 KB
Description 24-26.5GHz Low Noise Amplifier
Datasheet download datasheet CHA2192 Datasheet
Additional preview pages of the CHA2192 datasheet.

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Full PDF Text Transcription

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CHA2192 24-26.5GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2192 is a two stages low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features ■ 1.8 dB noise figure ■ 15 dB ± 1dB gain ■ 10 dBm output power ■ Very good broadband input matching ■ DC power consumption, 40mA @ 3.5V ■ Chip size : 1.67 x 0.97 x 0.
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