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CHA2194 - 36-44GHz Low Noise Amplifier

Datasheet Summary

Description

The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 36GHz to 44GHz point to point and point to multipoint communication .

Features

  • Broad band performance 36-44GHz 3dB noise figure 19dB gain, ± 0.5dB gain flatness Low DC power consumption, 45mA 20dBm 3rd order intercept point Chip size : 1.670 x 0.970x 0.1mm Main Characteristics Tamb = +25°C 28 25,00 26 24 22 20 18 15,00 16 14 12 10 8 5,00 6 4 2 0 -2 -5,00 -4 -6 -8 -10 -12 -15,00 -14 -16 -18 dBS21 NF dBS11 dBS22 -20 -22 -25,00 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 52 54 56 58 60 Frequency ( GHz ) On wafer typical measurement Symbol Parameter NF Noise figure at fre.

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Datasheet Details

Part number CHA2194
Manufacturer United Monolithic Semiconductors
File Size 214.50 KB
Description 36-44GHz Low Noise Amplifier
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CHA2194 RoHS COMPLIANT 36-44GHz Low Noise Amplifier Self biased GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 36GHz to 44GHz point to point and point to multipoint communication . The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main Features Broad band performance 36-44GHz 3dB noise figure 19dB gain, ± 0.5dB gain flatness Low DC power consumption, 45mA 20dBm 3rd order intercept point Chip size : 1.670 x 0.970x 0.
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