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CHA5390 - 24-30GHz Medium Power Amplifier

Datasheet Summary

Description

The CHA5390 is a high gain broadband fourstage monolithic medium power amplifier.

It is designed for a wide range of applications, from military to commercial communication systems.

The backside of the chip is both RF and DC grounded.

Features

  • Broadband performances : 24-30GHz.
  • 25dBm output power.
  • 24dB gain.
  • Good broadband matchings.
  • Low DC power consumption, 460mA @ 5V.
  • Chip size : 2.99 X 1.31 X 0.10 mm Typical in JIG measurements : 15 30 10 25 5 20 0 15 -5 10 -10 5 -15 0 -20 -5 -25 -10 22 24 26 28 30 32 Frequency (GHz) Input Rloss : grey solid line - Output Rloss : dash line. Main Characteristics Tamb. = 25°C Parameter Min Typ Max Unit Fop Operating f.

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Datasheet Details

Part number CHA5390
Manufacturer United Monolithic Semiconductors
File Size 174.86 KB
Description 24-30GHz Medium Power Amplifier
Datasheet download datasheet CHA5390 Datasheet
Additional preview pages of the CHA5390 datasheet.

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Full PDF Text Transcription

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CHA5390 24-30GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5390 is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features • Broadband performances : 24-30GHz • 25dBm output power. • 24dB gain • Good broadband matchings • Low DC power consumption, 460mA @ 5V • Chip size : 2.99 X 1.31 X 0.
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