Datasheet4U Logo Datasheet4U.com

CHA5390TBF - 24-30GHz Medium Power Amplifier

Datasheet Summary

Description

The monolithic microwave IC (MMIC) in the package is a high gain broadband fourstage monolithic medium power amplifier.

It is designed for a wide range of applications, from military to commercial communication systems.

Features

  • Broadband performance: 24-30GHz.
  • Small signal gain 21dB (typical).
  • Output power (P-1dB) 24dBm (typical).
  • Low DC power consumption: 460mA.
  • SMD leadless package.
  • Dimensions: 6.35 x 6.35 x 0.97 mm3 "Please note that PIN 1 is located in the lower left corner of the package (front-side view) for all SMD-type packages from United Monolithic Semiconductors. It is indicated by a triangle on the package lid. Star.

📥 Download Datasheet

Datasheet preview – CHA5390TBF

Datasheet Details

Part number CHA5390TBF
Manufacturer United Monolithic Semiconductors
File Size 166.50 KB
Description 24-30GHz Medium Power Amplifier
Datasheet download datasheet CHA5390TBF Datasheet
Additional preview pages of the CHA5390TBF datasheet.

📁 Similar Datasheet

  • CHA-20NF - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20NM - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20NMF - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20SF - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20SM - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20SMF - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA02016 - High Frequency 70-GHz Thin Film Chip Resistor (Vishay)
  • CHA0402 - High Frequency 70-GHz Thin Film Chip Resistor (Vishay)
  • CHA3080-98F - 71 ~ 76 GHz Medium Power Amplifier (UMS)
  • CHA441 - Hall-effect sensor (Cosemitech)
Other Datasheets by United Monolithic Semiconductors

Full PDF Text Transcription

Click to expand full text
CHA5390TBF 24-30GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The monolithic microwave IC (MMIC) in the package is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in a new SMD leadless chip carrier. SMD Package Dimensions Main Features ■ Broadband performance: 24-30GHz ■ Small signal gain 21dB (typical) ■ Output power (P-1dB) 24dBm (typical) ■ Low DC power consumption: 460mA ■ SMD leadless package ■ Dimensions: 6.35 x 6.35 x 0.
Published: |