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CHA8710-QDB - 25W X-Band High Power Amplifier

Datasheet Summary

Description

The CHA8710-QDB is a two stage High Power Amplifier operating between 8.5 and 10.5GHz and providing typically 25W of saturated output power and 41% of power added efficiency.

It is designed for a wide range of applications, from defense to commercial communication and radar systems.

Features

  • Frequency range: 8.5-10.5GHz.
  • High output power: 25W.
  • High PAE: 41%.
  • Linear Gain: 29.5dB.
  • DC bias: Vd=30Volt @ Idq=0.75A.
  • 46 Leads QFN 7x7 PAE Pout Main Electrical Characteristics Vd = +30V, Idq = 750mA, Pulse width=25µs & Duty cycle =10%, Tcase. = +25°C Symbol Parameter Min Typ Max Freq Frequency range 8.5 10.5 Gain Linear Gain 29.5 Pout Output Power 25 PAE Associated Power Added Efficiency 41 Unit GHz dB W % Ref. : DSCHA87104093-QDB - 03 Apr 24 1.

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Datasheet Details

Part number CHA8710-QDB
Manufacturer United Monolithic Semiconductors
File Size 1.21 MB
Description 25W X-Band High Power Amplifier
Datasheet download datasheet CHA8710-QDB Datasheet
Additional preview pages of the CHA8710-QDB datasheet.

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CHA8710-QDB 25W X-Band High Power Amplifier Monolithic Microwave IC in SMD leadless package Description The CHA8710-QDB is a two stage High Power Amplifier operating between 8.5 and 10.5GHz and providing typically 25W of saturated output power and 41% of power added efficiency. It is designed for a wide range of applications, from defense to commercial communication and radar systems. The circuit is manufactured with a robust GaN HEMT process, via holes through the substrate, air bridges and electron beam gate lithography. UMS A8710 YYWW Main Features ■ Frequency range: 8.5-10.5GHz ■ High output power: 25W ■ High PAE: 41% ■ Linear Gain: 29.5dB ■ DC bias: Vd=30Volt @ Idq=0.
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