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CHA8710-QDB Datasheet 25w X-band High Power Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA8710-QDB 25W X-Band High Power Amplifier Monolithic Microwave IC in SMD leadless.

General Description

The CHA8710-QDB is a two stage High Power Amplifier operating between 8.5 and 10.5GHz and providing typically 25W of saturated output power and 41% of power added efficiency.

It is designed for a wide range of applications, from defense to mercial munication and radar systems.

The circuit is manufactured with a robust GaN HEMT process, via holes through the substrate, air bridges and electron beam gate lithography.

Key Features

  • Frequency range: 8.5-10.5GHz.
  • High output power: 25W.
  • High PAE: 41%.
  • Linear Gain: 29.5dB.
  • DC bias: Vd=30Volt @ Idq=0.75A.
  • 46 Leads QFN 7x7 PAE Pout Main Electrical Characteristics Vd = +30V, Idq = 750mA, Pulse width=25µs & Duty cycle =10%, Tcase. = +25°C Symbol Parameter Min Typ Max Freq Frequency range 8.5 10.5 Gain Linear Gain 29.5 Pout Output Power 25 PAE Associated Power Added Efficiency 41 Unit GHz dB W % Ref. : DSCHA87104093-QDB - 03 Apr 24 1.

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CHA8710-QDB Distributor