VBQF1101N Description
VBQF1101N N-Channel 100-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.010 at VGS = 10 V DFN 3x3 EP Top View Bottom View Pin 1 ID (A).
VBQF1101N Key Features
- TrenchFET® Power MOSFET
- 175 °C Junction Temperature
- Low Thermal Resistance Package
- 100 % Rg Tested