VBsemi Electronics VBQF1101N
N-Channel MOSFET
| Part No. | VBQF1101N |
|---|---|
| Datasheet | VBQF1101N Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● TrenchFET® Power MOSFET● 175 °C Junction Temperature
● Low Thermal Resistance Package
● 100 % Rg Tested
APPLICATIONS
● Isolated DC/DC Converters RoHS COMPLIANT Top View 1 8 2 7 3 6 4 5 D G S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS
TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current Single Pulse Avalanche Energyb L = 0.1 mH IAS EAS Maximum Power Dissipationb TC = 25 °C TA = 25 °Cd PD Operating Junction and Storage Temperature Range TJ, Tstg THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case (Drain) Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. d. When Mounted on 1" square PCB (FR-4 material). PCB Mount (TO-263)d Symbol RthJA RthJC Limit 100 ± 20 50 45 60 51 60 355c 3.35 - 55 to 175 Limit 40 0.4 Unit V A mJ W °C Unit °C/W 1 VBQF1101N SPECIFICATIONS TJ = 25...
