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VBQF1606
N-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 60
RDS(on) () 0.005 at VGS = 10 V 0.013 at VGS = 4.5 V
ID (A)a 30 26
FEATURES
• 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:
www.VBsemi.com
DFN 3x3 EP
Top View
Bottom View
Pin 1
Top View
1
8
2
7
3
6
4
5
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
VGS
± 20
V
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C TC = 100 °C
ID
30 25a
Pulsed Drain Current
IDM
100
A
Continuous Source Current (Diode Conduction)
IS
70a
Avalanche Current
IAS
50
Single Avalanche Energy (Duty Cycle 1 %)
L = 0.
VBQF1606 Datasheet
