VBQF3211
VBQF3211 is Dual N-Channel MOSFET manufactured by VBsemi.
FEATURES
- Trench FET® power MOSFET
APPLICATIONS
- DC/DC
- Notebook system power
- POL
D1
D2
3.30 mm
S1 1
G1 2
3.30 mm
S2
G2
D1
D1
D2
D2
Bottom View
G1
G2
S1 N-Channel MOSFET
S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current Single Pulse Avalanche Energy
TC = 25 °C TA = 25 °C
L = 0.1 m...
