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VBQF3211
www.VBsemi.com
Dual N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 20
RDS(on) () 0.0120 at VGS = 4.5 V 0.0160 at VGS = 2.5 V 0.0190 at VGS = 1.8 V
ID (A) 25 20 16
Qg (TYP.) 12 nC
DFN 3.3x3.3
FEATURES • TrenchFET® power MOSFET
APPLICATIONS • DC/DC • Notebook system power • POL
D1
D2
3.30 mm
S1 1
G1 2
3.
VBQF3211 Datasheet
