VBsemi Electronics VBQF3316
Dual N-Channel MOSFET
| Part No. | VBQF3316 |
|---|---|
| Datasheet | VBQF3316 Download |
| Manufacturer | VBsemi Electronics |
| Description | Dual N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● TrenchFET® Power MOSFET
● 100 % Rg Tested
● 100 UIS Tested
● Compliant to RoHS Directive 2002/95/EC DFN 3.3x3.3 3.30 mm S1 1 G1 2 3.30 mm S2 3 G2 4 D1 8 D1 7 D2 6 D2 5 Bottom View
APPLICATIONS
● Synchronous Rectification● Notebook System Power
● POL D1 D2
● Low Current DC/DC G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 30 V VGS ± 20 TC = 25 °C 26 Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 21 8.8a, b Pulsed Drain Current TA = 70 °C 7a, b A IDM 80 Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS 19 2.2a, b Single Pulse Avalanche Current L = 0.1 mH IAS 14 Single Pulse Avalanche Energy EAS 9.8 mJ TC = 25 °C 23 Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 14.8 2.6a, b W TA = 70 °C 1.7a, b Operating Junction and Storage Temperature Range Soldering Recomme...
