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VBQF3316
Dual N-Channel 30-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.016 at VGS = 10 V 30
0.020 at VGS = 4.5 V
ID (A) 26 23
Qg (Typ.) 4.1 nC
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET • 100 % Rg Tested • 100 UIS Tested • Compliant to RoHS Directive 2002/95/EC
DFN 3.3x3.3
3.30 mm
S1 1
G1 2
3.