VBQF3316 Description
VBQF3316 Dual N-Channel 30-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.016 at VGS = 10 V 30 0.020 at VGS = 4.5 V ID (A) 26 23 Qg (Typ.) 4.1.
VBQF3316 Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFET
- 100 % Rg Tested
- 100 UIS Tested
- pliant to RoHS Directive 2002/95/EC