The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SUM110N10-09
Vishay Siliconix
N-Channel 100-V (D-S) 200_C MOSFET
FEATURES PRODUCT SUMMARY
V(BR)DSS (V)
100
rDS(on) (W)
0.0095 @ VGS = 10 V
ID (A)
110 a
D D D D
TrenchFETr Power MOSFET 200_C Junction Temperature New Package with Low Thermal Resistance 100% Rg Tested
APPLICATIONS
D
D Automotive − 42-V Power Bus − DC/DC Conversion − Motor Drivers
TO-263
G
G
D S S
Top View
Ordering Information: SUM110N10-09 SUM110N10-09-E3 (Lead Free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.