SiHFB18N50K Datasheet | Vishay

FEATURES 500 0.26 - Low Gate Charge Qg Results in Simple Drive Requirement - Improved Gate, Avalanche and Dynamic d V/dt Ruggedness Available Ro HS- PLIANT - Fully Characterized Capacitance and Avalanche Voltage and Current - Low RDS(on) - Lead (Pb)-free Available TO-220 APPLICATIONS G S G D S N-Channel MOSFET - Switch Mode Power Supply (SMPS) - Uninterruptible Power Supply - High Speed Power Switching - Hard Switched and High Frequency Circuits ORDERING INFORMATION Package Lead (Pb)-free Sn Pb TO-220 IRFB18N50KPb F Si HFB18N50K-E3 IRFB18N50K Si HFB18N50K ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM Energyb LIMIT 500 ± 30 17 11 68 1.8 EAS IAR EAR TC = 25 °C PD d V/dt TJ, Tstg for 10 s 6-32 or M3 screw 370 17 22 220 7.8 - 55 to + 150 300d 10 W/°C m J A m J W V/ns °C N A UNIT V Linear Derating Factor Single Pulse Avalanche Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) Mounting Torque Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. Starting TJ = 25 °C, L = 2.5 m H, RG = 25 Ω, IAS = 17 A. c. ISD ≤ 17 A, d I/dt ≤ 376 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. - Pb containing terminations are not Ro HS pliant, exemptions may apply Document Number: 91100 S-80567-Rev. A, 20-Jun-08 .vishay. 1 WORK-IN-PROGRESS IRFB18N50K, Si HFB18N50K Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambienta SYMBOL Rth JA Rth CS Rth JC TYP. 0.50 MAX. 58 0.56 °C/W UNIT Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain)a Note a. Rth is measured at TJ approximately 90 °C. SPECIFICATIONS TJ = 25 °C, unless otherwise noted .. PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature...