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Si1865DDL - Load Switch

General Description

The Si1865DDL includes a p- and n-channel MOSFET in a single SC70-6 package.

The low on-resistance p-channel TrenchFET is tailored for use as a load switch.

The n-channel, with an external resistor, can be used as a levelshift to drive the p-channel load-switch.

Key Features

  • Low RDS(on) TrenchFET®.
  • 1.8 V to 12 V Input.
  • 1.5 V to 8 V Logic Level Control.
  • Low Profile, Small Footprint SC70-6 Package.
  • 2000 V ESD Protection On Input Switch, VON/OFF.
  • Adjustable Slew-Rate.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription for Si1865DDL (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for Si1865DDL. For precise diagrams, and layout, please refer to the original PDF.

Load Switch with Level-Shift Si1865DDL Vishay Siliconix PRODUCT SUMMARY VIN (VDS2) (V) RDS(on) () Max. 0.200 at VIN = 4.5 V 1.8 to 12 0.300 at VIN = 2.5 V 0.508 at VIN =...

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ax. 0.200 at VIN = 4.5 V 1.8 to 12 0.300 at VIN = 2.5 V 0.508 at VIN = 1.8 V ID (A) 1.1 0.9 0.7 DESCRIPTION The Si1865DDL includes a p- and n-channel MOSFET in a single SC70-6 package. The low on-resistance p-channel TrenchFET is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a levelshift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The Si1865DDL operates on supply lines from 1.8 V to 12 V, and can drive loads up to 1.1 A. FEATURES • Low RDS(on) TrenchFET® • 1.8 V to 12 V Input • 1.

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