Si1865DDL Datasheet | Vishay

DESCRIPTION The Si1865DDL includes a p- and n-channel MOSFET in a single SC70-6 package. The low on-resistance p-channel Trench FET is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a levelshift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The Si1865DDL operates on supply lines from 1.8 V to 12 V, and can drive loads up to 1.1 A. FEATURES - Low RDS(on) Trench FET® - 1.8 V to 12 V Input - 1.5 V to 8 V Logic Level Control - Low Profile, Small Footprint SC70-6 Package - 2000 V ESD Protection On Input Switch, VON/OFF - Adjustable Slew-Rate - Material categorization: For definitions of pliance please see .vishay./doc?99912 APPLICATIONS - Load Switch with Level-Shift - Slew-rate Control - Portable/Consumer Devices APPLICATION CIRCUITS VIN R1 4 Q2 2, 3 C1 6 ON/OFF Ci R2 5 Q1 1 R2 Co VOUT LOAD GND Time (us) 14 10.5 IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF tf 7 tr 3.5 td(off) td(on) 0 0 2 4 6 8 10 R2 (kΩ) Switching Variation R2 at VIN = 2.5 V, R1 = 20 k PONENTS R1 Pull-Up Resistor Typical 10 k to 1 Ma R2 Optional Slew-Rate Control Typical 0 to 100 ka C1 Optional Slew-Rate Control Typical 1000 p...