SiSS60DN Description
() at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View 30 0.00131 0.00201 25.9 181.8 Single.
SiSS60DN Key Features
- TrenchFET® Gen IV power MOSFET
- SKYFET® with monolithic Schottky diode
- Optimized RDS x Qg and RDS x Qgd FOM enable higher efficiency for high frequency switching
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance