SiSS64DN Datasheet | Vishay

FEATURES - Trench FET® Gen IV power MOSFET - Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss - 100 % Rg and UIS tested - Material categorization: for definitions of pliance please see .vishay./doc?99912 APPLICATIONS - Synchronous rectification - High power density DC/DC - VRMs and embedded DC/DC - Synchronous buck converter - Load switching N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Power PAK 1212-8S Si SS64DN-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current (t = 100 μs) Continuous source-drain diode current Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation Operating junction and storage temperature range Soldering remendations (peak temperature) d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 m H TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS IDM IS IAS EAS TJ, Tstg LIMIT 30 +20, -16 40 g 40 g 37 b, c 29.8 b, c 100 40 g 4 b, c 30 45 57 36 4.8 b, c 3 b, c -55 to +150 260 UNIT V A m J W °C THERMAL RESISTANCE RATINGS PARAMETER...