Datasheet4U Logo Datasheet4U.com

SiSS64DN - N-Channel 30V MOSFET

Features

  • TrenchFET® Gen IV power MOSFET.
  • Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Datasheet preview – SiSS64DN

Datasheet Details

Part number SiSS64DN
Manufacturer Vishay
File Size 269.77 KB
Description N-Channel 30V MOSFET
Datasheet download datasheet SiSS64DN Datasheet
Additional preview pages of the SiSS64DN datasheet.

📁 Similar Datasheet

  • SISS27DN-T1-GE3 - 30V P-Channel MOSFET (Kexin)
  • SIS0100 - Black and White Image Sensor Camera Module (Sanyo Semicon Device)
  • SiS1057 - JFET Operational Amplifier (Silicon Supplies)
  • SIS23C128 - 16K x 8 CMOS Mask ROM (Silicon Integrated Systems)
  • SIS23C128A - 16K x 8 CMOS Mask ROM (Silicon Integrated Systems)
  • SIS23C256 - CMOS MASK ROM (ETC)
  • SIS23C256A - CMOS MASK ROM (ETC)
  • SIS23C32 - (SIS23C32 / SIS23C33) 4K x 8 CMOS MASK ROM (Silicon Integrated Systems)
  • SIS23C32A - (SIS23C32 / SIS23C33) 4K x 8 CMOS MASK ROM (Silicon Integrated Systems)
  • SIS23C33 - (SIS23C32 / SIS23C33) 4K x 8 CMOS MASK ROM (Silicon Integrated Systems)
Other Datasheets by Vishay

Full PDF Text Transcription

Click to expand full text
www.vishay.com SiSS64DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET PowerPAK® 1212-8S D D D 6 D 7 8 5 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View 30 0.00210 0.00286 21 40 Single FEATURES • TrenchFET® Gen IV power MOSFET • Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
Published: |