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SiSS66DN - N-Channel 30V MOSFET

Features

  • TrenchFET® Gen IV power MOSFET.
  • SKYFET® with monolithic Schottky diode.
  • Optimized RDS x Qg and RDS x Qgd FOM enable higher efficiency for high frequency switching.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiSS66DN
Manufacturer Vishay
File Size 229.76 KB
Description N-Channel 30V MOSFET
Datasheet download datasheet SiSS66DN Datasheet
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Full PDF Text Transcription

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www.vishay.com SiSS66DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode PowerPAK® 1212-8S D D D 6 D 7 8 5 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View 30 0.00138 0.00219 24.7 178.3 Single FEATURES • TrenchFET® Gen IV power MOSFET • SKYFET® with monolithic Schottky diode • Optimized RDS x Qg and RDS x Qgd FOM enable higher efficiency for high frequency switching • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
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